Datasheet > RJK0211DPA-00-J5A

RJK0211DPA-00-J5A

更新时间： 2024-11-21 20:06:51

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	145K
描述
POWER, FET

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技术参数
数据手册

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RJK0211DPA-00-J5A 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	30 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	30 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

RJK0211DPA-00-J5A 数据手册

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Preliminary Datasheet

RJK0211DPA

Silicon N Channel Power MOS FET

Power Switching

R07DS0218EJ0200

Rev.2.00

Dec 07, 2010

Features



Very high speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 6.8 m typ. (at V_GS= 10 V)



Pb-free

Halogen-free

Outline

RENESAS Package code: PWSN0008DC-B

(Package name: WPAK(3))

7 8

D D D D

6 7 8

1, 2, 3

5, 6, 7, 8 Drain

Source

Gate

4 3 2

S S

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

+16, –12

Note1

Drain peak current

I_D(pulse)

120

Body-drain diode reverse drain current

Avalanche current

I_DR

Note 2

I_AP

Note 2

Avalanche energy

E_AR

Channel dissipation

Pch ^Note3

ch-c ^Note3

Tch

Channel to case thermal resistance

Channel temperature

4.17

150

C/W

C

Storage temperature

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tch = 25C, Rg  50 

3. Tc = 25C

R07DS0218EJ0200 Rev.2.00

Dec 07, 2010

Page 1 of 6

12 3 4 5 6 7

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