是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220FP | 包装说明: | , |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RJJ0621DPP-E0-T2 | RENESAS |
获取价格 |
POWER, FET | |
RJJ1011DPD | RENESAS |
获取价格 |
P Channel Power MOS FET High Speed Switching | |
RJJ1011DPD-00-J2 | RENESAS |
获取价格 |
P Channel Power MOS FET High Speed Switching | |
RJK005N03 | ROHM |
获取价格 |
2.5V Drive Nch MOS FET | |
RJK005N03FRAT146 | ROHM |
获取价格 |
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
RJK005N03T146 | ROHM |
获取价格 |
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
RJK0202DSP | RENESAS |
获取价格 |
Silicon N Channel Power MOS FET Power Switching | |
RJK0202DSP-00-J0 | RENESAS |
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Silicon N Channel Power MOS FET Power Switching | |
RJK0204DPA | RENESAS |
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Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching | |
RJK0204DPA_13 | RENESAS |
获取价格 |
Built in SBD N Channel Power MOS FET High Speed Power Switching |