Datasheet > RFK25N20

RFK25N20

更新时间： 2024-11-06 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
5页	46K
描述
25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs

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替代型号

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RFK25N20 数据手册

RFK25N18, RFK25N20

Data Sheet

October 1998

File Number 1500.3

25A, 180V and 200V, 0.150 Ohm,

Features

N-Channel Power MOSFETs

• 25A, 180V and 200V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 0.150Ω

DS(ON)

Symbol

Formerly developmental type TA09594.

Ordering Information

PART NUMBER

RFK25N18

RFK25N20

PACKAGE

BRAND

RFK25N18

RFK25N20

TO-204AE

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AE

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5

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RFK25N20 替代型号

型号	品牌	替代类型	描述	数据表
2N6758	MICROSEMI	功能相似	N-CHANNEL MOSFET
IRF220	INTERSIL	功能相似	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
IRF230	INTERSIL	功能相似	8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

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