Datasheet > RFK25P10

RFK25P10

更新时间： 2024-11-06 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
4页	37K
描述
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

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数据手册

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RFK25P10 数据手册

RFH25P08, RFH25P10,

RFK25P08, RFK25P10

Semiconductor

-25A, -100V and -80V, 0.150 Ohm,

P-Channel Power MOSFETs

September 1998

Features

Description

• -25A, -100V and -80V

These are P-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

• r

= 0.150Ω

DS(ON)

[ /Title

(RFH25

P08,

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

These types can be operated directly from integrated cir-

cuits.

RFH25P

10,

Formerly developmental type TA49230.

Ordering Information

RFK25P

08,

RFK25P

10)

/Subject

(-25A, -

100V, -

80V,

PART NUMBER

RFH25P08

PACKAGE

TO-218AC

BRAND

RFH25P08

Symbol

RFH25P10

TO-218AC

TO-204AE

RFH25P10

RFK25P08

RFK25P10

RFK25P08

RFK25P10

NOTE: When ordering, use the entire part number.

0.150

Ohm, P-

Channel

Power

MOS-

FETs)

/Author

()

Packaging

JEDEC TO -218AC

JEDEC TO-204AE

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

DRAIN

/Key-

words (-

25A, -

100V a-

80V,

SOURCE (PIN 2)

GATE (PIN 1)

0.150

Ohm, P-

Channel

Power

MOS-

FETs)

/Creator

()

/DOCIN

FO pdf-

mark

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1632.1

6-1

12 3 4

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