Datasheet > RC48F0P0VBQ0

RC48F0P0VBQ0

更新时间： 2024-11-20 22:15:35

品牌	Logo	应用领域
英特尔 - INTEL		存储
页数	文件大小	规格书
102页	1616K
描述
Intel StrataFlash Embedded Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RC48F0P0VBQ0 数据手册

Intel StrataFlash Embedded Memory

(P30)

1-Gbit P30 Family

Datasheet

Product Features

■ High performance

■ Security

— One-Time Programmable Registers:

— 85/88 ns initial access

• 64 unique factory device identifier bits

• 64 user-programmable OTP bits

• Additional 2048 user-programmable OTP bits

— Selectable OTP Space in Main Array:

• 4x32KB parameter blocks + 3x128KB main

blocks (top or bottom configuration)

— Absolute write protection: V_PP= V_SS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 40 MHz with zero wait states, 20 ns clock-to-

data output synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming

(BEFP) at 5 µs/byte (Typ)

— 1.8 V buffered programming at 7 µs/byte (Typ)

■ Architecture

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

■ Software

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Intel^®Flash Data Integrator optimized

— Basic Command Set and Extended Command

Set compatible

— 128-KByte main blocks

■ Voltage and Power

— V_CC(core) voltage: 1.7 V – 2.0 V

— V_CCQ(I/O) voltage: 1.7 V – 3.6 V

— Standby current: 55 µA (Typ) for 256-Mbit

— 4-Word synchronous read current:

13 mA (Typ) at 40 MHz

— Common Flash Interface capable

■ Density and Packaging

— 64/128/256-Mbit densities in 56-Lead TSOP

package

— 64/128/256/512-Mbit densities in 64-Ball

Intel® Easy BGA package

— 64/128/256/512-Mbit and 1-Gbit densities in

Intel® QUAD+ SCSP

■ Quality and Reliability

— Operating temperature: –40 °C to +85 °C

• 1-Gbit in SCSP is –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology (130 nm)

— 16-bit wide data bus

The Intel StrataFlash^®Embedded Memory (P30) product is the latest generation of Intel

StrataFlash^®memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device

brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.

Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR

device, and support for code and data storage. Features include high-performance synchronous-

burst read mode, fast asynchronous access times, low power, flexible security options, and three

industry standard package choices.

The P30 product family is manufactured using Intel^®130 nm ETOX™ VIII process technology.

Order Number: 306666, Revision: 001

April 2005

12 3 4 5 6 7...102

中文翻译

下载PDF

与RC48F0P0VBQ0相关器件

型号	品牌	获取价格	描述	数据表
RC48F0P0VT00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F0P0VTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F0P0ZB00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F0P0ZBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F0P0ZT00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F0P0ZTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F2000W0YC00	NUMONYX	获取价格	Flash, 4MX16, 60ns, PBGA44,
RC48F2P0VB00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F2P0VBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F2P0VT00	INTEL	获取价格	Intel StrataFlash Embedded Memory

与RC48F0P0VBQ0相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

RC48F0P0VBQ0

RC48F0P0VBQ0 数据手册

与RC48F0P0VBQ0相关器件

与RC48F0P0VBQ0相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RC48F0P0VBQ0

RC48F0P0VBQ0 数据手册

与RC48F0P0VBQ0相关器件

与RC48F0P0VBQ0相关文章

您还可以找

您在本页遇到什么问题？