Datasheet > RC48F4400P0T1V0

RC48F4400P0T1V0

更新时间： 2024-11-04 03:29:55

品牌	Logo	应用领域
恒忆 - NUMONYX		蜂窝
页数	文件大小	规格书
139页	2135K
描述
StrataFlash㈢ Cellular Memory

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中文翻译

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数据手册

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RC48F4400P0T1V0 数据手册

Numonyx™ StrataFlash Cellular Memory

(M18)

Datasheet

Product Features

High-Performance Read, Program and Erase

Power

— Core voltage: 1.7 V - 2.0 V

— 96 ns initial read access

— 108 MHz with zero wait-state synchronous

burst reads: 7 ns clock-to-data output

— 133 MHz with zero wait-state synchronous

burst reads: 5.5 ns clock-to-data output

— 8-, 16-, and continuous-word

synchronous-burst Reads

— Programmable WAIT configuration

— Customer-configurable output driver

impedance

— Buffered Programming:

— I/O voltage: 1.7 V - 2.0 V

— Standby current: 60 µA (typ) for 512-Mbit,

65 nm

— Deep Power-Down mode: 2 µA (typ)

— Automatic Power Savings mode

— 16-word synchronous-burst read current:

23 mA (typ) @ 108 MHz; 24 mA (typ) @

133 MHz

Software

— Numonyx™ Flash Data Integrator

(Numonyx™ FDI) optimized

— Basic Command Set and Extended

Command Set compatible

2.0 µs/Word (typ), 512-Mbit 65 nm;

Block Erase: 0.9 s per block (typ)

— 20 µs (typ) program/erase suspend

Architecture

— Common Flash Interface

— 16-bit wide data bus

— Multi-Level Cell Technology

Security

— OTP Registers:

— Symmetrically-Blocked Array Architecture

— 256-Kbyte Erase Blocks

64 unique pre-programmed bits

2112 user-programmable bits

— Absolute write protection with V_PP= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 1-Gbit device: Eight 128-Mbit partitions

— 512-Mbit device: Eight 64-Mbit partitions

— 256-Mbit device: Eight 32-Mbit partitions.

— 128-Mbit device: Eight 16-Mbit partitions.

— Read-While-Program and Read-While-Erase

— Status Register for partition/device status

— Blank Check feature

Density and Packaging

— Density: 128-, 256-, and 512-Mbit, and 1-

Gbit

— Address-data multiplexed and non-

multiplexed interfaces

— x16D (105-ball) Flash SCSP

— x16C (107-ball) Flash SCSP

— 0.8 mm pitch lead-free solder-ball

Quality and Reliability

— Expanded temperature: –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ X Process Technology (65 nm)

— ETOX™ IX Process Technology (90 nm)

Order Number: 309823-11

April 2008

12 3 4 5 6 7...139

中文翻译

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与RC48F4400P0T1V0相关器件

型号	品牌	获取价格	描述	数据表
RC48F4400P0TB00	NUMONYX	获取价格	Flash, 32MX16, 85ns, PBGA64, BGA-64
RC48F4400P0TB00A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC48F4400P0TB0EA	MICRON	获取价格	2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage
RC48F4400P0TB0EJ	MICRON	获取价格	2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage
RC48F4400P0TBB0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TBU0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TBV0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TWB0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TWU0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TWV0	NUMONYX	获取价格	StrataFlash® Cellular Memory

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