5秒后页面跳转
RBV808 PDF预览

RBV808

更新时间: 2024-11-10 06:07:11
品牌 Logo 应用领域
SYNSEMI 整流二极管局域网
页数 文件大小 规格书
2页 39K
描述
SILICON BRIDGE RECTIFIERS

RBV808 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:NBase Number Matches:1

RBV808 数据手册

 浏览型号RBV808的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIERS  
RBV800 - RBV810  
RBV25  
PRV : 50 - 1000 Volts  
Io : 8.0 Amperes  
3.9 ± 0.2  
C3  
30 ± 0.3  
4.9 ± 0.2  
FEATURES :  
Æ 3.2 ± 0.1  
* High current capability  
* High surge current capability  
* High reliability  
* Low reverse current  
~ ~  
+
* Low forward voltage drop  
* High case dielectric strength of 2000 VDC  
* Ideal for printed circuit board  
* Very good heat dissipation  
* Pb / RoHS Free  
1.0 ± 0.1  
MECHANICAL DATA :  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
10 7.5 7.5  
2.0 ± 0.2  
0.7 ± 0.1  
±0.2 ±0.2 ±0.2  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated lead solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimensions in millimeters  
* Weight : 7.97 grams ( Approximaly )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RBV  
800  
RBV  
801  
RBV  
802  
RBV  
804  
RBV  
806  
RBV  
808  
RBV  
810  
SYMBOL  
RATING  
UNIT  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
8.0  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
A
100  
1000  
Maximum DC Blocking Voltage  
IF(AV)  
Maximum Average Forward Current Tc = 55°C  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Current Squared Time at t < 8.3 ms.  
IFSM  
I2t  
300  
160  
1.0  
10  
A
A2S  
V
Maximum Forward Voltage per Diode at IF = 4.0 A  
VF  
IR  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Typical Thermal Resistance (Note 1)  
Ta = 25 °C  
mA  
mA  
°C/W  
°C  
IR(H)  
200  
2.5  
Ta = 100 °C  
RqJC  
TJ  
- 40 to + 150  
- 40 to + 150  
Operating Junction Temperature Range  
Storage Temperature Range  
TSTG  
°C  
Notes :  
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.  
Page 1 of 2 Rev. 03 : September 9, 2005  

与RBV808相关器件

型号 品牌 获取价格 描述 数据表
RBV808D EIC

获取价格

SILICON BRIDGE RECTIFIERS
RBV810 SYNSEMI

获取价格

SILICON BRIDGE RECTIFIERS
RBV810 EIC

获取价格

SILICON BRIDGE RECTIFIERS
RBV810 LGE

获取价格

Silicon Bridge Rectifiers
RBV810D EIC

获取价格

SILICON BRIDGE RECTIFIERS
RBVC0106N7 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.7A I(D), 60V, 4-Element, N-Channel and P-Channel,
RBVN0104N7 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.7A I(D), 40V, 4-Element, N-Channel, Silicon, Metal
RBVN0106N7 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.7A I(D), 60V, 4-Element, N-Channel, Silicon, Metal
RBVN2110NF SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.46A I(D), 100V, 4-Element, N-Channel, Silicon, Met
RBVN2222NC SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.9A I(D), 220V, N-Channel, Silicon, Metal-oxide Sem