生命周期: | Obsolete | 包装说明: | IN-LINE, R-CDIP-T14 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 0.7 A |
最大漏源导通电阻: | 3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 8 pF | JESD-30 代码: | R-CDIP-T14 |
元件数量: | 4 | 端子数量: | 14 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 3 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RBVN0106N7 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.7A I(D), 60V, 4-Element, N-Channel, Silicon, Metal | |
RBVN2110NF | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.46A I(D), 100V, 4-Element, N-Channel, Silicon, Met | |
RBVN2222NC | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.9A I(D), 220V, N-Channel, Silicon, Metal-oxide Sem | |
RBVP0104N7 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 40V, 4-Element, P-Channel, Silicon, Metal | |
RBVP0106N7 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 4-Element, P-Channel, Silicon, Metal | |
RBVQ1000N7 | SUPERTEX |
获取价格 |
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Me | |
RBVQ2001P | SUPERTEX |
获取价格 |
Power Field-Effect Transistor, 0.6A I(D), 30V, 2ohm, 4-Element, P-Channel, Silicon, Metal- | |
RBVQ2006P | SUPERTEX |
获取价格 |
Power Field-Effect Transistor, 0.41A I(D), 90V, 5ohm, 4-Element, P-Channel, Silicon, Metal | |
RBVQ3001N7 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 1.6A I(D), 40V, 4-Element, N-Channel and P-Channel, | |
RBW2 | E-SWITCH |
获取价格 |
RBW2 SERIES |