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RBVN0104N7 PDF预览

RBVN0104N7

更新时间: 2024-09-22 15:49:15
品牌 Logo 应用领域
超科 - SUPERTEX 开关晶体管
页数 文件大小 规格书
1页 37K
描述
Small Signal Field-Effect Transistor, 0.7A I(D), 40V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

RBVN0104N7 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-CDIP-T14
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):0.7 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):8 pFJESD-30 代码:R-CDIP-T14
元件数量:4端子数量:14
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
功耗环境最大值:3 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RBVN0104N7 数据手册

  

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