RBV810

更新时间： 2024-09-22 06:07:11

品牌	Logo	应用领域
SYNSEMI		二极管局域网
页数	文件大小	规格书
2页	39K
描述
SILICON BRIDGE RECTIFIERS

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RBV810 数据手册

SILICON BRIDGE RECTIFIERS

RBV800 - RBV810

RBV25

PRV : 50 - 1000 Volts

Io : 8.0 Amperes

3.9 ± 0.2

30 ± 0.3

4.9 ± 0.2

FEATURES :

Æ 3.2 ± 0.1

* High current capability

* High surge current capability

* High reliability

* Low reverse current

~ ~

* Low forward voltage drop

* High case dielectric strength of 2000 VDC

* Ideal for printed circuit board

* Very good heat dissipation

* Pb / RoHS Free

1.0 ± 0.1

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

10 7.5 7.5

2.0 ± 0.2

0.7 ± 0.1

±0.2 ±0.2 ±0.2

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

Dimensions in millimeters

* Weight : 7.97 grams ( Approximaly )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RBV

800

RBV

801

RBV

802

RBV

804

RBV

806

RBV

808

RBV

810

SYMBOL

RATING

UNIT

VRRM

VRMS

VDC

100

200

140

200

400

280

400

8.0

600

420

600

800

560

800

1000

700

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

1000

Maximum DC Blocking Voltage

IF(AV)

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

IFSM

I²t

300

160

1.0

A²S

Maximum Forward Voltage per Diode at IF = 4.0 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Ta = 25 °C

°C/W

°C

IR(H)

200

2.5

Ta = 100 °C

RqJC

- 40 to + 150

Operating Junction Temperature Range

Storage Temperature Range

TSTG

°C

Notes :

1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.

Page 1 of 2 Rev. 03 : September 9, 2005

中文翻译

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与RBV810相关器件

型号	品牌	获取价格	描述	数据表
RBV810D	EIC	获取价格	SILICON BRIDGE RECTIFIERS
RBVC0106N7	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.7A I(D), 60V, 4-Element, N-Channel and P-Channel,
RBVN0104N7	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.7A I(D), 40V, 4-Element, N-Channel, Silicon, Metal
RBVN0106N7	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.7A I(D), 60V, 4-Element, N-Channel, Silicon, Metal
RBVN2110NF	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.46A I(D), 100V, 4-Element, N-Channel, Silicon, Met
RBVN2222NC	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.9A I(D), 220V, N-Channel, Silicon, Metal-oxide Sem
RBVP0104N7	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 40V, 4-Element, P-Channel, Silicon, Metal
RBVP0106N7	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 4-Element, P-Channel, Silicon, Metal
RBVQ1000N7	SUPERTEX	获取价格	Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Me
RBVQ2001P	SUPERTEX	获取价格	Power Field-Effect Transistor, 0.6A I(D), 30V, 2ohm, 4-Element, P-Channel, Silicon, Metal-

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