5秒后页面跳转
RBV800D_05 PDF预览

RBV800D_05

更新时间: 2024-11-08 06:07:11
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 47K
描述
SILICON BRIDGE RECTIFIERS

RBV800D_05 数据手册

 浏览型号RBV800D_05的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIERS  
RBV800D - RBV810D  
RBV25  
PRV : 50 - 1000 Volts  
Io : 8.0 Amperes  
3.9 ± 0.2  
C3  
30
±
0.3  
4.9 ± 0.2  
FEATURES :  
Æ 3.2 ± 0.1  
* High current capability  
* High surge current capability  
* High reliability  
* Low reverse current  
+
~ ~  
* Low forward voltage drop  
* High case dielectric strength of 2000 VDC  
* Ideal for printed circuit board  
* Very good heat dissipation  
* Pb / RoHS Free  
1.0 ± 0.1  
MECHANICAL DATA :  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
10  
7.5 7.5  
2.0 ± 0.2  
0.7 ± 0.1  
±0.2 ±0.2 ±0.2  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated lead solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimensions in millimeters  
* Weight : 7.97 grams ( Approximaly )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RBV  
RBV  
RBV  
RBV  
RBV  
RBV  
RBV  
SYMBOL  
RATING  
UNIT  
800D 801D 802D 804D 806D 808D 810D  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
8.0  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
A
100  
1000  
Maximum DC Blocking Voltage  
IF(AV)  
Maximum Average Forward Current Tc = 55°C  
Peak Forward Surge Current Single half sine wave  
Superimposed on rated load (JEDEC Method)  
Current Squared Time at t < 8.3 ms.  
300  
IFSM  
A
I2t  
VF  
A2S  
V
166  
1.0  
Maximum Forward Voltage per Diode at IF = 8.0 A  
10  
200  
IR  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Typical Thermal Resistance (Note 1)  
Ta = 25 °C  
mA  
IR(H)  
Ta = 100 °C  
mA  
2.2  
°C/W  
°C/W  
°C  
RqJC  
RqJA  
TJ  
Typical Thermal Resistance at Junction to Ambient  
Operating Junction Temperature Range  
Storage Temperature Range  
15  
- 40 to + 150  
- 40 to + 150  
TSTG  
°C  
Notes :  
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.  
Page 1 of 2 Rev. 03 : September 9, 2005  

与RBV800D_05相关器件

型号 品牌 获取价格 描述 数据表
RBV801 SYNSEMI

获取价格

SILICON BRIDGE RECTIFIERS
RBV801 EIC

获取价格

SILICON BRIDGE RECTIFIERS
RBV801 LGE

获取价格

Silicon Bridge Rectifiers
RBV801D EIC

获取价格

SILICON BRIDGE RECTIFIERS
RBV802 SYNSEMI

获取价格

SILICON BRIDGE RECTIFIERS
RBV802 EIC

获取价格

SILICON BRIDGE RECTIFIERS
RBV802 LGE

获取价格

Silicon Bridge Rectifiers
RBV802D EIC

获取价格

SILICON BRIDGE RECTIFIERS
RBV803S SECOS

获取价格

Molding Single-Phase Bridge Rectifier
RBV804 LGE

获取价格

Silicon Bridge Rectifiers