SILICON BRIDGE RECTIFIERS
RBV800D - RBV810D
RBV25
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
3.9 ± 0.2
C3
4.9 ± 0.2
FEATURES :
Æ 3.2 ± 0.1
* High current capability
* High surge current capability
* High reliability
* Low reverse current
+
~ ~
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
10
7.5 7.5
2.0 ± 0.2
0.7 ± 0.1
±0.2 ±0.2 ±0.2
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in millimeters
* Weight : 7.97 grams ( Approximaly )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
RBV
RBV
RBV
RBV
RBV
RBV
SYMBOL
RATING
UNIT
800D 801D 802D 804D 806D 808D 810D
50
35
50
100
70
200
140
200
400
280
400
8.0
600
420
600
800
560
800
1000
700
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
A
100
1000
Maximum DC Blocking Voltage
IF(AV)
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
300
IFSM
A
I2t
VF
A2S
V
166
1.0
Maximum Forward Voltage per Diode at IF = 8.0 A
10
200
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 °C
mA
IR(H)
Ta = 100 °C
mA
2.2
°C/W
°C/W
°C
RqJC
RqJA
TJ
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
15
- 40 to + 150
- 40 to + 150
TSTG
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.
Page 1 of 2 Rev. 03 : September 9, 2005