RBV806

更新时间： 2024-09-21 06:07:11

品牌	Logo	应用领域
SYNSEMI		整流二极管
页数	文件大小	规格书
2页	39K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

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技术参数
数据手册

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RBV806 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

RBV806 数据手册

SILICON BRIDGE RECTIFIERS

RBV800 - RBV810

RBV25

PRV : 50 - 1000 Volts

Io : 8.0 Amperes

3.9 ± 0.2

30 ± 0.3

4.9 ± 0.2

FEATURES :

Æ 3.2 ± 0.1

* High current capability

* High surge current capability

* High reliability

* Low reverse current

~ ~

* Low forward voltage drop

* High case dielectric strength of 2000 VDC

* Ideal for printed circuit board

* Very good heat dissipation

* Pb / RoHS Free

1.0 ± 0.1

MECHANICAL DATA :

* Case : Reliable low cost construction

utilizing molded plastic technique

10 7.5 7.5

2.0 ± 0.2

0.7 ± 0.1

±0.2 ±0.2 ±0.2

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated lead solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

Dimensions in millimeters

* Weight : 7.97 grams ( Approximaly )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RBV

800

RBV

801

RBV

802

RBV

804

RBV

806

RBV

808

RBV

810

SYMBOL

RATING

UNIT

VRRM

VRMS

VDC

100

200

140

200

400

280

400

8.0

600

420

600

800

560

800

1000

700

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

1000

Maximum DC Blocking Voltage

IF(AV)

Maximum Average Forward Current Tc = 55°C

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Current Squared Time at t < 8.3 ms.

IFSM

I²t

300

160

1.0

A²S

Maximum Forward Voltage per Diode at IF = 4.0 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)

Ta = 25 °C

°C/W

°C

IR(H)

200

2.5

Ta = 100 °C

RqJC

- 40 to + 150

Operating Junction Temperature Range

Storage Temperature Range

TSTG

°C

Notes :

1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.

Page 1 of 2 Rev. 03 : September 9, 2005

中文翻译

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