Datasheet > RB501V-40

RB501V-40

更新时间： 2023-12-06 20:11:43

品牌	Logo	应用领域
森美特 - SUNMATE		光电二极管
页数	文件大小	规格书
1页	281K
描述
Rectifier device Schottky Diode

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RB501V-40 数据手册

RB501V-40

SURFACE MOUNT SCHOTTKY BARRIER DIODES

Features

High current rectifier schottky diode.

Low voltage;Low inductance.

For power supply.

SOD-323

High frequency rectification.

Dim

Min

2.30

1.75

1.15

0.25

0.05

0.70

0.30

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

Mechanical Data

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.004 grams (approx.)

Marking: 4

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Parameter

Symbol

Limits

Unit

Peak reverse voltage

V_RM

V_R

DC reverse voltage

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

I_O

0.1

I_FSM

T_j

125

℃

T_stg

-55~+125

Parameter

Symbol

Min. Typ. Max.

Unit

Conditions

0.55

0.34

I_F=100mA

I_F=10mA

Forward voltage

Reverse current

V_F

I_R

μA

V_R=10v

Capacitance between terminals C_T

V_R=10V,f=1MHz

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