RB508FM-40AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
●Outline
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V
40
80
1
V
mA
A
R
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I
o
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I
FSM
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●Features
●Inner Circuit
High reliability
Small mold type
Super Low I
R
●Application
●Packaging Specifications
Packing
Small current rectification
Embossed Tape
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
180
8
3000
T106
9A
●Structure
Epitaxial planar
Taping Code
Marking
(T =25℃ unless otherwise specified)
●Absolute Maximum Ratings
c
Parameter
Repetitive peak reverse voltage
Reverse voltage
Symbol
Conditions
Duty≦0.5
Direct reverse voltage
Limits
40
40
Unit
V
V
V
RM
V
R
I
Forward current
Direct reverse voltage, per diode
120
80
1
mA
mA
A
F
Glass epoxy mounted, 60Hzhalf sin
waveform, resistive load, per diode
I
o
Average rectified forward current
Peak forward surge current
60Hzhalf sin waveform,
I
FSM
Non-repetitive, one cycle, T =25℃
a
T
T
stg
Junction temperature
Storage temperature
-
-
150
-55 ~ 150
℃
j
℃
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2021/01/14_Rev.001