Datasheet > RB501V-40_10

RB501V-40_10

更新时间： 2022-11-17 00:44:17

品牌	Logo	应用领域
TAK_CHEONG		肖特基二极管
页数	文件大小	规格书
4页	1012K
描述
200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Schottky Barrier Diode

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RB501V-40_10 数据手册

TAK CHEON

^®

SEMICONDUCTOR

200mW SOD-323 SURFACE MOUNT

Small Outline Flat Lead Plastic Package

Schottky Barrier Diode

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

P_D

Power Dissipation

200

°C

T_STG

Storage Temperature Range

-65 to +125

T_J

V_RM

V_R

Operating Junction Temperature

Repetitive Peak Reverse Voltage

Maximum DC Blocking Voltage

Average Forward Rectified Current

+125

°C

I_F(AV)

100

Peak Forward Surge Current

(8.3mS Single Half-wave)

I_FSM

These ratings are limiting values above which the serviceability of the diode may be impaired.

Specification Features:

Low Forward Voltage Drop

Flat Lead SOD-323 Small Outline Plastic Package

Surface Device Type Mounting

RoHS Compliant

DEVICE MARKING CODE:

Device Type

RB501V-40

Device Marking

Green EMC

Matte Tin(Sn) Terminal Finish

Band Indicates Cathode

Electrical Characteristics

T_A= 25°C unless otherwise noted

Limits

Parameter

Test Condition

Symbol

Unit

Min

Max

B_V

I_R

Breakdown Voltage

I_R=500µA

Volts

µA

Reverse Leakage Current

V_R=10V

I_F=10mA

0.340

0.550

V_F

Forward Voltage

TCBAT42WS,

Volts

I_F=100mA

Number: DB-020

June 2010, Revision F

Page 1

12 3 4

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