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RB501V-40-AH PDF预览

RB501V-40-AH

更新时间: 2024-11-19 14:54:59
品牌 Logo 应用领域
先科 - SWST 肖特基二极管
页数 文件大小 规格书
3页 156K
描述
肖特基二极管

RB501V-40-AH 数据手册

 浏览型号RB501V-40-AH的Datasheet PDF文件第2页浏览型号RB501V-40-AH的Datasheet PDF文件第3页 
RB501V-40-AH  
Silicon Epitaxial Planar Schottky Barrier Diode  
PINNING  
Features  
• High reliability  
DESCRIPTION  
Cathode  
PIN  
1
• AEC-Q101 Qualified  
• Small surface mounting type  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Anode  
2
2
1
Top View  
Simplified outline SOD-323 and symbol  
Applications  
• Low current rectification  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VRM  
VR  
Value  
Unit  
V
45  
Peak Reverse Voltage  
40  
V
Reverse Voltage  
Average Forward Rectified Current  
Peak Forward Surge Current (60 Hz for 1 Cyc.)  
Junction Temperature  
IF(AV)  
IFSM  
Tj  
100  
mA  
A
1
125  
- 40 to + 125  
Storage Temperature Range  
Tstg  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
V(BR)R  
Min.  
40  
Typ.  
-
Max.  
-
Unit  
Reverse Breakdown Voltage  
V
at IR = 100 μA  
Forward Voltage  
at IF = 10 mA  
at IF = 100 mA  
-
-
-
-
-
0.34  
0.55  
-
VF  
V
at IF = 100 mA , TJ = 125℃  
0.43  
Reverse Current  
at VR = 10 V  
at VR = 10 V , TJ = 125℃  
IR  
-
-
-
30  
-
µA  
pF  
200  
Capacitance Between Terminals  
at VR = 10 V, f = 1 MHz  
-
3.6  
-
CT  
1 / 3  
®
Dated:08/09/2023 Rev : 01  

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