RB200 SERIES
2.0 A SILICON BRIDGE RECTIFIERS
2.0 Amperes
CURRENT
50 to 1000 Volts
VOLTAGE
FEATURES
• Plastic material used carries Underwriters Laboratory recognition.
• High case dielectric strength.
• Typical IR LESS Than 1uA.
• Exceeds environmental standards of MIL-STD-19500
• Ideal for printed circuit board.
• High temperature soldering guaranteed: 265OC/10 seconds/ .375”
(9.5 mm) lead length/5 Ibs. (2.3kg) tension
• Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: Reliable low cost construction utilizing molded plastic technique
• Terminals: Leads solderable per MIL-STD-750, Method 2026
• Mounting Position: Any
• Weight:1.4 grams.
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, Single phase, half wave, 60Hz.
For Capacitive load derate current by 20%.
PARAMETER
SYMBOL RB200
RB201 RB202 RB204 RB206
RB208 RB2010
UNITS
V
Maximum Recurrent Peak Reverse Voltage
VRRM
50
35
50
100
70
200
140
200
400
600
420
600
800
560
800
1000
700
Maximum RMS Bridge Input Voltage
VRMS
VDC
IF(AV)
IFSM
280
400
2.0
V
V
A
Maximum DC Blocking Voltage
100
1000
Maximum Average Forward Rectified Output Current .375"
(9.5mm ) Lead Length at TA
=25OC
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
50
15
A
A2s
V
I2t Rating for fusing ( t<8.35ms)
I 2
t
Maximum Forward Voltage Drop per Element at 1.0A
VF
I R
1.0
Maximum DC Reverse Current T
at Rated DC Blocking Voltage T
A
=25 OC
=100 OC
10
1
µA
A
Typical Junction capacitance per bridge element (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
CJ
TJ
30
pF
OC
OC
-55 to + 125
-55 to + 150
TSTG
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
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STAD-JAN.11.2007