WTE
POWER SEMICONDUCTORS
Pb
RB200 – RB2010
2.0A SINGLE-PHASE BRIDGE RECTIFIER
Features
!
Diffused Junction
!
!
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
Recognized File # E157705
A
B
+
~
~
-
RB-20
Min
Dim
A
Max
9.40
7.40
—
8.60
6.90
27.9
25.4
0.71
4.60
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
B
C
D
C
Mechanical Data
!
!
D
—
Case: RB-20, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
E
E
0.81
5.60
G
All Dimensions in mm
~
!
!
!
!
!
Polarity: As Marked on Body
Weight: 1.1 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
-
+
G
G
~
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol RB200 RB201 RB202 RB204 RB206 RB208 RB2010 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
2.0
V
A
Average Rectified Output Current @TA = 50°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
60
A
Forward Voltage (per element)
@IF = 2.0A
VFM
IRM
1.0
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
500
µA
Operating Temperature Range
Storage Temperature Range
Tj
-55 to +125
-55 to +150
°C
°C
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
RB200 – RB2010
1 of 4
© 2006 Won-Top Electronics