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RB205T-90_11 PDF预览

RB205T-90_11

更新时间: 2024-09-16 12:20:27
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
4页 1057K
描述
Schottky barrier diode

RB205T-90_11 数据手册

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Data Sheet  
Schottky barrier diode  
RB205T-90  
Applications  
Dimensions (Unit : mm)  
Structure  
Switching power supply  
Features  
1) Cathode common type.  
(TO-220)  
(1) (2) (3)  
2) Low IR  
3) High reliability  
205  
9
Construction  
Silicon epitaxial planer  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
Symbol  
VRM  
VR  
Unit  
V
90  
90  
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
V
15  
Average rectified forward current (*1)  
Forward current surge peak (60Hz / 1cyc) (*1)  
Junction temperature  
Io  
A
100  
IFSM  
Tj  
A
150  
C  
C  
Storage temperature  
40 to 150  
Tstg  
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=121C  
Electrical characteristic (Ta=25°C)  
Parameter  
Conditions  
Symbol  
VF  
Min.  
Typ.  
Max.  
0.78  
300  
2
Unit  
V
Forward voltage  
Reverse current  
-
-
-
-
-
-
IF=7.5A  
IR  
VR=90V  
A  
Thermal impedance  
junction to case  
jc  
C/W  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.04 - Rev.E  
1/3  

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