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RB161QS-40 PDF预览

RB161QS-40

更新时间: 2024-11-10 19:32:59
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
6页 873K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, HALOGEN FREE, SMD1006, 2 PIN

RB161QS-40 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-XBCC-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.49配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XBCC-N2元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:1 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:40 V
表面贴装:YES技术:SCHOTTKY
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RB161QS-40 数据手册

 浏览型号RB161QS-40的Datasheet PDF文件第2页浏览型号RB161QS-40的Datasheet PDF文件第3页浏览型号RB161QS-40的Datasheet PDF文件第4页浏览型号RB161QS-40的Datasheet PDF文件第5页浏览型号RB161QS-40的Datasheet PDF文件第6页 
Schottky Barrier Diode  
RB161QS-40  
Datasheet  
Applications  
Dimensions (Unit : mm)  
Land Size Figure (Unit : mm)  
General rectification  
0.6  
Features  
1) Small Silicon package (SMD1006)  
2) Halogen free  
SMD1006  
3) Low VF  
Structure  
Cathode  
Construction  
Silicon epitaxial planar type  
ROHM : SMD1006  
Anode  
Taping Dimensions (Unit : mm)  
Absolute Maximum Ratings (Tc=25)  
Parameter  
Conditions  
Limits  
Unit  
V
Symbol  
VRM  
Duty0.5  
Repetitive Peak Reverse Voltage  
40  
40  
1
Direct Reverse Voltage  
Reverse Voltage  
VR  
IO  
V
A
Glass epoxy board mounted, 60Hz half  
sin wave, resistive load, Tc=90ºC Max.  
Average forward rectified current  
Repetitive Peak Forward Current  
Non-repetitive Forward Current Surge Peak  
t1ms  
Duty0.25  
IFRM  
IFSM  
Tj  
3
A
60Hz half sin wave, one cycle,  
Non-repetitive at Ta=25ºC  
7
A
-
-
Operating Junction Temperature  
Storage Temperature  
150  
ºC  
ºC  
Tstg  
-55+150  
Electrical Characteristics (Tj=25)  
Parameter  
Forward Voltage  
Conditions  
IF=1A  
Min.  
Typ.  
Max.  
600  
100  
Symbol  
Unit  
mV  
μA  
VF  
IR  
VR=10V  
Reverse Current  
www.rohm.com  
1/3  
c
2016 ROHM Co., Ltd. All rights reserved.  
2016.02 - Rev.001  

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