Datasheet > RB162M-30

RB162M-30

更新时间： 2024-02-23 04:58:58

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
5页	526K
描述
Schottky Barrier Diode

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中文翻译

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RB162M-30 数据手册

RB162M-30

Data Sheet

Schottky Barrier Diode

RB162M-30

lApplications

General rectification

lExternal Dimensions(Unit : mm)

lLand Size Figure(Unit : mm)

1.2

0.1±0.1

ꢀꢀꢀ 0.05

1.6±0.1

lFeatures

1)Small power mold type.(PMDU)

2)High reliability

PMDU

lConstruction

Silicon epitaxial

lStructure

0.9±0.1

ROHM : PMDU

JEDEC :SOD-123

0.8±0.1

Manufacture Date

lTaping Dimensions(Unit : mm)

0.25±0.05

φ 1.55±0.05

2.0±0.05

4.0±0.1

φ 1.0±0.1

1.81±0.1

1.5MAX

lAbsolute Maximum Ratings(Ta=25°C)

Parameter

Reverse voltage (repetitive)

Reverse voltage (DC)

Limits

Symbol

Unit

V_RM

V_R

Average rectified forward current (*1)

Forward current surge peak (60Hz・1cyc)

Junction temperature

I_FSM

150

°C

Storage temperature

Tstg

-55 to +150

(*1)Mounting on epoxi board. 180°Half sine wave

lElectrical Characteristics(Ta=25°C)

Parameter

Forward voltage

Conditions

Symbol

V_F1

Min.

Typ.

0.44

Max.

Unit

I_F=1.0A

V_R=30V

0.52

100

I_R

Reverse current

www.rohm.com

1/4

2012.08 - Rev.A

12 3 4 5

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