Datasheet > RB160M-30_1

RB160M-30_1

更新时间： 2024-11-21 03:37:55

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	141K
描述
Schottky barrier diode

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中文翻译

获取价格

数据手册

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RB160M-30_1 数据手册

RB160M-30

Diodes

Schottky barrier diode

RB160M-30

zApplications

z Dimensions (Unit : mm)

z Land size figure (Unit : mm)

General rectification

0.1±0.1

ꢀꢀꢀ 0.05

1.6±0.1

1.2

zFeatures

1) Small power mold type. (PMDU)

2) Low I_R.

3) High reliability.

PMDU

zStructure

zConstruction

0.9±0.1

0.8±0.1

Silicon epitaxial planar

ROHM : PMDU

JEDEC :SOD-123

Manufacture Date

z Taping specifications (Unit : mm)

0.25±0.05

φ1.55±0.05

2.0±0.05

4.0±0.1

φ1.0±0.1

1.81±0.1

1.5MAX

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak (60Hz・1cyc)

Junction temperature

I_FSM

125

℃

Storage temperature

-40 to +125

Tstg

(*1)Mounted on epoxy board. 180°Half sine wave

zElectrical characteristics (Ta=25°C)

Parameter

Conditions

Symbol

V_F1

Min.

Typ.

0.39

0.43

3.0

Max.

0.46

0.48

Unit

I_F=0.5A

Forward voltage

V_F2

I_F=1.0A

V_R=15V

V_R=30V

I_R1

µA

Reverse current

I_R2

9.0

Rev.C

1/3

12 3 4

中文翻译

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