Datasheet > RB095B-30_11

RB095B-30_11

更新时间： 2024-09-27 09:38:03

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	1073K
描述
Schottky barrier Diode

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RB095B-30_11 数据手册

Data Sheet

Schottky barrier Diode

RB095B-30

Applications

Dimensions(Unit : mm)

Land size figure(Unit : mm)

6.0

General rectification

Features

1)Power mold type.(CPD)

2)Low V_F

1 6

1.6

3)High reliability

CPD

2.3 2.

Construction

Silicon epitaxial planar

Structure

(2)

(1) (3)

Taping dimensions(Unit : mm)

Absolute maximum ratings (Ta=25C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current(*1)

Forward current surge peak (60Hz・1cyc)(*1)

Junction temperature

I_FSM

150

C

Storage temperature

40 to 150

Tstg

(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=125C

Electrical characteristic (Ta=25C)

Parameter

Conditions

Symbol

V_F

Min.

Typ.

Max.

0.425

200

Unit

Forward voltage

Reverse current

I_F=3.0A

V_R=30V

junction to case

I_R

μA

Thermal impedance

6.0

jc

C/W

www.rohm.com

2011.04 - Rev.F

1/3

12 3 4

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