Datasheet > RB095B-40_09

RB095B-40_09

更新时间： 2024-01-16 18:17:28

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	446K
描述
Schottky barrier Diode

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中文翻译

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数据手册

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RB095B-40_09 数据手册

Schottky barrier diode

RB095B-40

zApplications

zDimensions(Unit : mm)

zLand size figure(Unit : mm)

6.0

General rectification

(Common cathode dual chip)

zFeatures

1.6

1)Power mold type.(CPD3)

2)Low V_F

3)High reliability

CPD

2.3 2.3

zConstruction

zStructure

(2)

Silicon epitaxial planar

(1) (3)

zTaping dimensions(Unit : mm)

zAbsolute maximum ratings (Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current(*1)

Forward current surge peak (60Hz・1cyc)(*1)

Junction temperature

I_FSM

150

°C

Storage temperature

-40 to +150

Tstg

(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=120°C

zElectrical characteristic (Ta=25°C)

Parameter

Conditions

Symbol

V_F

Min.

Typ.

Max.

0.55

100

6.0

Unit

Forward voltage

Reverse current

I_F=3.0A

V_R=40V

junction to case

I_R

µA

Thermal impedance

θjc

°C/W

www.rohm.com

2009.11 - Rev.F

1/3

12 3 4

中文翻译

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