RB051L-40

更新时间： 2024-11-22 22:17:11

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
2页	36K
描述
Schottky barrier diode

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RB051L-40 数据手册

RB051L-40

Diodes

Schottky barrier diode

RB051L-40

zExternal dimensions (Units : mm)

zApplications

High frequency rectification

For switching power supply

1.5±0.2

CATHODE MARK

zFeatures

1) Compact power mold type. (PMDS)

2) Ultra low V^F. (V^F=0.29V Typ. at 1A)

3) V^RM=40V guaranteed.

+0.02

−0.1

0.1

2.0±

0.2

2.6±0.2

zConstruction

Silicon epitaxial planar

ROHM : PMDS

EIAJ : −

JEDEC : SOD-106

·····Date of manufacture EX. 1999.12→9, C

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Limits

Unit

Peak reverse voltage

DC reverse voltage

3.0

Mean rectifying current

Peak forward surge current

FSM

(60Hz

)

125

°C

Junction temperature

Storage temperature

Tstg

−40~+125

90°C Max. 180° half sine wave when mounted on an alumina substrate

(82 × 30 × 1.0 mm)

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Typ.

Max.

0.35

0.45

1.0

Unit

Conditions

−

=1.0A

=3.0A

Forward voltage

µA

=20V

=15V

Reverse current

150

中文翻译

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