Datasheet > RA45H4452M-E01

RA45H4452M-E01

更新时间： 2024-09-13 03:38:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		无线
页数	文件大小	规格书
9页	94K
描述
440-520MHz 45W 12.5V MOBILE RADIO

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数据手册

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RA45H4452M-E01 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA45H4452M

440-520MHz 45W 12.5V MOBILE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA45H4452M is a 45-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 440- to

520-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 4V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4.5V (typical) and 5V (maximum). At

V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD@0 @ V_DD=12.5V, V_GG=0V)

• P_out>45W, h_T>35% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 440-520MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

ORDERING INFORMATION:

ORDER NUMBER

RA45H4452M-E01

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA45H4452M-01

(Japan - packed without desiccator)

RA45H4452M

23 Dec 2002

MITSUBISHI ELECTRIC

1/9

12 3 4 5 6 7...9

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