Datasheet > RA45H7687M1_11

RA45H7687M1_11

更新时间： 2024-09-13 12:23:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器
页数	文件大小	规格书
10页	255K
描述
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

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RA45H7687M1_11 数据手册

< Silicon RF Power Modules >

RA45H7687M1

RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

DESCRIPTION

The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for

12.8-volt mobile radios that operate in the 763- to 870-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage 1 and the gate voltage 2(V_GG1=V_GG2=0V), only a small

leakage current flows into the drain and the nominal output signal

(P_out=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is

supplied to the gate voltage 1, the output power and the drain

current increase as the gate voltage 2 increases. The output

power and the drain current increase substantially with the gate

voltage 2 around 0V (minimum) under the condition when the gate

voltage 1 is kept in 3.4V. The nominal output power becomes

available at the state that V_GG2is 4V (typical) and 5V (maximum).

At this point, V_GG1has to be kept in 3.4V.

BLOCK DIAGRAM

At V_GG1=3.4V & V_GG2=5V, the typical gate currents are 0.4mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltages and controlling the output power

with the input power.

RF Input added Gate Voltage 1(P_in&V_GG1

Gate Voltage 2(V_GG2), Power Control

Drain Voltage (V_DD), Battery

)

FEATURES

• Enhancement-Mode MOSFET Transistors

(I_DD0 @ V_DD=12.8V, V_GG=0V)

RF Output (P_out

)

RF Ground (Case)

• P_out>45W, _T>33% @V_DD=12.8V, V_GG1=3.4V, V_GG2=5V, P_in=50mW

• Broadband Frequency Range: 763-870MHz

PACKAGE CODE: H2M

• Metal cap structure that makes the improvements of RF radiation

simple

• Low-Power Control Current I_GG1+I_GG2=0.4mA (typ) @ V_GG1=3.4V, V_GG2=5V

• Module Size: 67 x 19.4 x 9.9 mm

• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output

power with the input power.

RoHS COMPLIANCE

• RA45H7687M1 is a RoHS compliant product.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA45H7687M1-101

Publication Date : Oct．2011

12 3 4 5 6 7...10

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与RA45H7687M1_11相关器件

型号	品牌	获取价格	描述	数据表
RA45H7687M1-101	MITSUBISHI	获取价格	RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA45H8994M1	MITSUBISHI	获取价格	RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA45H8994M1_08	MITSUBISHI	获取价格	RF MOSFET MODULE 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA45H8994M1_10	MITSUBISHI	获取价格	896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA45H8994M1_11	MITSUBISHI	获取价格	RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA45H8994M1-101	MITSUBISHI	获取价格	RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RA4-5W-K	FUJITSU	获取价格	Power/Signal Relay, POWER/SIGNAL RELAY
RA46	TE	获取价格	Cascadable Amplifier 1000 to 4000 MHz
RA46	MACOM	获取价格	Cascadable, Hi Gain
RA46-SMRA46	TE	获取价格	Cascadable Amplifier

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