是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SOT-115J | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.33.00.01 |
风险等级: | 5.8 | Is Samacsys: | N |
其他特性: | LOW NOISE | 特性阻抗: | 75 Ω |
构造: | MODULE | 增益: | 19.5 dB |
功能数量: | 1 | 最大工作频率: | 200 MHz |
最小工作频率: | 5 MHz | 最高工作温度: | 100 °C |
最低工作温度: | -30 °C | 封装主体材料: | PLASTIC/EPOXY |
封装等效代码: | SOT-115J | 电源: | 12 V |
射频/微波设备类型: | WIDE BAND LOW POWER | 子类别: | RF/Microwave Amplifiers |
技术: | GAAS | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
R2005240 | PDI |
获取价格 |
Si Reverse, 5 - 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC | |
R2005240P12 | PDI |
获取价格 |
GaAs Reverse, 5 - 200MHz, 24.2dB typ. Gain @ 200MHz, 360mA max. @ 12VDC | |
R2005280L | PDI |
获取价格 |
Si Reverse, low current, 5 - 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC | |
R2005300L | PDI |
获取价格 |
Si Reverse, low current, 5 - 200MHz, 30.0dB typ. Gain @ 200MHz, 140mA max. @ 24VDC | |
R2005350L | PDI |
获取价格 |
Si Reverse, low current, 5 - 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC | |
R200A | ETC |
获取价格 |
Optoelectronic | |
R200B | ETC |
获取价格 |
Optoelectronic | |
R200CH12 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR | |
R200CH12C2G2 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC | |
R200CH12C2G3 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 360V V(RRM), 1 Element, TO-200A |