5秒后页面跳转
R2005200P12 PDF预览

R2005200P12

更新时间: 2024-01-30 02:07:38
品牌 Logo 应用领域
PDI /
页数 文件大小 规格书
4页 129K
描述
GaAs Reverse, 5 - 200MHz, 20.0dB typ. Gain @ 200MHz, 360mA max. @ 12VDC

R2005200P12 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SOT-115JReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.8Is Samacsys:N
其他特性:LOW NOISE特性阻抗:75 Ω
构造:MODULE增益:19.5 dB
功能数量:1最大工作频率:200 MHz
最小工作频率:5 MHz最高工作温度:100 °C
最低工作温度:-30 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:SOT-115J电源:12 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
技术:GAASBase Number Matches:1

R2005200P12 数据手册

 浏览型号R2005200P12的Datasheet PDF文件第2页浏览型号R2005200P12的Datasheet PDF文件第3页浏览型号R2005200P12的Datasheet PDF文件第4页 
Product Specification  
R2005200P12  
GaAs Reverse, 5 – 200MHz, 20.0dB typ. Gain @ 200MHz, 360mA max. @ 12VDC  
FEATURES  
Excellent linearity  
Superior return loss performance  
Extremely low distortion  
Optimal reliability  
R2005200P12  
Low noise  
Unconditionally stable under all terminations  
APPLICATION  
5 to 200 MHz CATV amplifier  
for reverse channel systems  
DESCRIPTION  
GaAs Reverse Hybrid  
Hybrid reverse amplifier employing GaAs die  
5 – 200 MHz  
20.0dB typ. Gain @ 200MHz  
360mA max. @ 12VDC  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134)  
SYMBOL PARAMETER  
MIN.  
-
MAX.  
70  
UNIT  
dBmV  
V
Vi  
RF input voltage (single tone)  
DC supply over-voltage (5 minutes)  
storage temperature  
Vov  
Tstg  
Tmb  
-
15  
- 40  
- 30  
+ 100  
+ 100  
°C  
operating mounting base temperature  
°C  
CHARACTERISTICS  
Table 1: S-Parameter, Noise Figure, DC Current; VB = 12V; Tmb = 30°C; ZS = ZL = 75 Ω  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP.  
MAX. UNIT  
Gp  
power gain  
f = 5 MHz  
19.5  
19.5  
-0.5  
-
20.0  
20.0  
0.0  
20.5  
21.0  
0.5  
dB  
dB  
dB  
dB  
f = 200 MHz  
SL  
FL  
slope 1)  
f = 5 to 200 MHz  
f = 5 to 200 MHz  
flatness of frequency  
response  
± 0.5  
S11  
S22  
F
input return loss  
f = 5 to 65 MHz  
f = 65 to 200 MHz  
f = 5 to 200 MHz  
f = 65 to 200 MHz  
f = 10 MHz  
20.0  
18.0  
20.0  
18.0  
-
-
dB  
dB  
dB  
dB  
dB  
dB  
mA  
-
-
output return loss  
noise figure  
-
4.4  
2.2  
5.0  
2.5  
360.0  
f = 200 MHz  
-
Itot  
total current  
350.0  
355.0  
consumption (DC)  
Notes:  
1) The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.  
Page 1 of 4  
2005 Oct 12  
Document Revision Level A  

与R2005200P12相关器件

型号 品牌 获取价格 描述 数据表
R2005240 PDI

获取价格

Si Reverse, 5 - 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC
R2005240P12 PDI

获取价格

GaAs Reverse, 5 - 200MHz, 24.2dB typ. Gain @ 200MHz, 360mA max. @ 12VDC
R2005280L PDI

获取价格

Si Reverse, low current, 5 - 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC
R2005300L PDI

获取价格

Si Reverse, low current, 5 - 200MHz, 30.0dB typ. Gain @ 200MHz, 140mA max. @ 24VDC
R2005350L PDI

获取价格

Si Reverse, low current, 5 - 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC
R200A ETC

获取价格

Optoelectronic
R200B ETC

获取价格

Optoelectronic
R200CH12 IXYS

获取价格

Silicon Controlled Rectifier, 1765 A, 1200 V, SCR
R200CH12C2G2 IXYS

获取价格

Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC
R200CH12C2G3 IXYS

获取价格

Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 360V V(RRM), 1 Element, TO-200A