5秒后页面跳转
R2005240 PDF预览

R2005240

更新时间: 2024-09-24 03:38:51
品牌 Logo 应用领域
PDI 射频微波高功率电源
页数 文件大小 规格书
4页 64K
描述
Si Reverse, 5 - 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC

R2005240 数据手册

 浏览型号R2005240的Datasheet PDF文件第2页浏览型号R2005240的Datasheet PDF文件第3页浏览型号R2005240的Datasheet PDF文件第4页 
Product Specification  
R2005240  
Si Reverse, 5 – 200MHz, 24.6dB typ. Gain @ 200MHz, 235A max. @ 24VDC  
FEATURES  
Excellent linearity  
Superior return loss performance  
Extremely low distortion  
Optimal reliability  
R2005240  
Low noise  
Unconditionally stable under all terminations  
APPLICATION  
5 to 200 MHz CATV amplifier  
for reverse channel systems  
DESCRIPTION  
Si Reverse Hybrid  
Hybrid reverse amplifier employing silicon dice  
5 – 200 MHz  
24.6dB typ. Gain @ 200MHz  
235mA max. @ 24VDC  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134)  
SYMBOL PARAMETER  
MIN.  
-
-
- 40  
- 30  
MAX.  
70  
30  
+ 100  
+ 100  
UNIT  
dBmV  
V
°C  
°C  
Vi  
RF input voltage (single tone)  
DC supply over-voltage (5 minutes)  
storage temperature  
Vov  
Tstg  
Tmb  
operating mounting base temperature  
CHARACTERISTICS  
Table 1: S-Parameter, Noise Figure, DC Current; VB = 24V; Tmb = 30°C; ZS = ZL = 75 Ω  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP.  
MAX. UNIT  
Gp  
power gain  
f = 5 MHz  
f = 200 MHz  
23.9  
23.7  
-0.2  
-
24.4  
24.6  
0.2  
24.9  
dB  
dB  
dB  
dB  
-
SL  
FL  
slope 1)  
flatness of frequency  
response  
f = 5 to 200 MHz  
f = 5 to 200 MHz  
0.5  
± 0.2  
S11  
S22  
F
input return loss  
output return loss  
noise figure  
f = 5 to 200 MHz  
f = 5 to 200 MHz  
f = 200 MHz  
20.0  
20.0  
-
-
-
dB  
dB  
dB  
mA  
2.7  
228.0  
3.5  
235.0  
Itot  
total current  
225.0  
consumption (DC)  
Notes:  
1) The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.  
Page 1 of 4  
2004 Jun 01  
Document Revision Level D  

与R2005240相关器件

型号 品牌 获取价格 描述 数据表
R2005240P12 PDI

获取价格

GaAs Reverse, 5 - 200MHz, 24.2dB typ. Gain @ 200MHz, 360mA max. @ 12VDC
R2005280L PDI

获取价格

Si Reverse, low current, 5 - 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC
R2005300L PDI

获取价格

Si Reverse, low current, 5 - 200MHz, 30.0dB typ. Gain @ 200MHz, 140mA max. @ 24VDC
R2005350L PDI

获取价格

Si Reverse, low current, 5 - 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC
R200A ETC

获取价格

Optoelectronic
R200B ETC

获取价格

Optoelectronic
R200CH12 IXYS

获取价格

Silicon Controlled Rectifier, 1765 A, 1200 V, SCR
R200CH12C2G2 IXYS

获取价格

Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC
R200CH12C2G3 IXYS

获取价格

Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 360V V(RRM), 1 Element, TO-200A
R200CH12C2G5 IXYS

获取价格

Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200A