生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | FAST | 标称电路换相断开时间: | 75 µs |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 20 V/us |
最大直流栅极触发电流: | 300 mA | 最大直流栅极触发电压: | 3 V |
JEDEC-95代码: | TO-200AC | JESD-30 代码: | O-CEDB-N2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 1765 A | 重复峰值关态漏电流最大值: | 70000 µA |
断态重复峰值电压: | 1200 V | 重复峰值反向电压: | 600 V |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | END | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
R200CH12CE6 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC | |
R200CH12CE7 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 840V V(RRM), 1 Element, TO-200A | |
R200CH12CE8 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 960V V(RRM), 1 Element, TO-200A | |
R200CH12CE9 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200 | |
R200CH12CW0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1080000mA I(T), 1200V V(DRM) | |
R200CH12CW2 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC | |
R200CH12CW3 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC | |
R200CH12CW4 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 480V V(RRM), 1 Element, TO-200A | |
R200CH12CW5 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC | |
R200CH12CW6 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC |