是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SOT-115J | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.33.00.01 |
风险等级: | 5.15 | 其他特性: | LOW NOISE |
特性阻抗: | 75 Ω | 构造: | MODULE |
增益: | 34.5 dB | 功能数量: | 1 |
最大工作频率: | 200 MHz | 最小工作频率: | 5 MHz |
最高工作温度: | 100 °C | 最低工作温度: | -30 °C |
封装主体材料: | PLASTIC/EPOXY | 封装等效代码: | SOT-115J |
电源: | 24 V | 射频/微波设备类型: | WIDE BAND LOW POWER |
子类别: | RF/Microwave Amplifiers | 最大压摆率: | 160 mA |
技术: | HYBRID | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
R200A | ETC |
获取价格 |
Optoelectronic |
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R200B | ETC |
获取价格 |
Optoelectronic |
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R200CH12 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR |
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R200CH12C2G2 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC |
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R200CH12C2G3 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 360V V(RRM), 1 Element, TO-200A |
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R200CH12C2G5 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 600V V(RRM), 1 Element, TO-200A |
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R200CH12C2G6 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 720V V(RRM), 1 Element, TO-200A |
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R200CH12C2G8 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765 A, 1200 V, SCR, TO-200AC |
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R200CH12C2G9 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1765A I(T)RMS, 1200V V(DRM), 1080V V(RRM), 1 Element, TO-200 |
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R200CH12C2GO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 1381.6 A, 1200 V, SCR, TO-200AC |
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