生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-X9 |
Reach Compliance Code: | unknown | 风险等级: | 5.8 |
最大集电极电流 (IC): | 150 A | 配置: | COMPLEX |
最小直流电流增益 (hFE): | 75 | 最大降落时间(tf): | 3000 ns |
JESD-30 代码: | R-PUFM-X9 | 元件数量: | 2 |
端子数量: | 9 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 690 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Power | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管元件材料: | SILICON | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
QM150DY24BK | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 150A I(C) | |
QM150DY-24BK | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
QM150DY24K | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 150A I(C) | |
QM150DY-24K | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
QM150DY-2H | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
QM150DY2HBK | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 150A I(C) | |
QM150DY-2HBK | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
QM150DY2HK | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 150A I(C) | |
QM150DY-2HK | MITSUBISHI |
获取价格 |
HIGH POWER SWITCHING USE INSULATED TYPE | |
QM150DY3H | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.4KV V(BR)CEO | 150A I(C) |