Datasheet > Q67100-Q2037

Q67100-Q2037

更新时间： 2024-11-06 23:06:07

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
23页	1155K
描述
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

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中文翻译

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数据手册

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Q67100-Q2037 数据手册

4M x 1-Bit Dynamic RAM

HYB 314100BJ/BJL -50/-60/-70

Low Power 4M x 1-Bit Dynamic RAM

Advanced Information

• 4 194 304 words by 1-bit organization

• 0 to 70 ˚C operating temperature

• Fast Page Mode Operation

• Performance:

-50

-60

-70

t_RAC

t_CAC

t_AA

RAS access time

CAS access time

Access time from address

Read/Write cycle time

Fast page mode cycle time

t_RC

110 130 ns

40 45 ns

t_PC

• Single + 3.3 V (± 0.3 V ) supply with a built-in V_bbgenerator

• Low power dissipation

max. 252 mW active (-50 version)

max. 216 mW active (-60 version)

max. 198 mW active (-70 version)

• Standby power dissipation:

7.2 mW max. standby (TTL)

3.6 mW max. standby (CMOS)

720 µW max. standby (CMOS) for Low Power Version

• Output unlatched at cycle end allows two-dimensional chip selection

• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,

hidden refresh and test mode capability

• All inputs and outputs TTL-compatible

• 1024 refresh cycles / 16 ms

• 1024 refresh cycles / 128 ms Low Power Version

• Plastic Packages: P-SOJ-26/20-5 with 300 mil width

Semiconductor Group

4.96

12 3 4 5 6 7...23

中文翻译

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