Datasheet > Q67100-Q2120

Q67100-Q2120

更新时间： 2024-01-10 13:12:42

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
25页	1363K
描述
1M x 4-Bit Dynamic RAM

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中文翻译

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数据手册

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Q67100-Q2120 数据手册

1M x 4-Bit Dynamic RAM

HYB 514405BJ/BJL-50/-60/-70

(Hyper Page Mode (EDO) version)

Preliminary Information

• 1 048 576 words by 4-bit organization

• 0 to 70 ˚C operating temperature

• Hyper Page Mode - EDO

• Performance:

-50

-60

-70

t_RAC

t_CAC

t_AA

RAS access time

CAS access time

Access time from address

Read/Write cycle time

t_RC

104 124 ns

25 30 ns

t_HPC

Hyper page mode (EDO)

cycle time

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 660 mW active (-50 version)

max. 605 mW active (-60 version)

max. 550 mW active (-70 version)

• Standby power dissipation:

11 mW max.standby (TTL)

5.5 mW max.standby (CMOS)

1.1 mW max.standby (CMOS) for Low Power Version

• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,

hidden refresh and test mode capability

• All inputs and outputs TTL-compatible

• 1024 refresh cycles / 16 ms

• 1024 refresh cycles / 128 ms for Low Power Version

• Plastic Packages: P-SOJ-26/20-5 with 300 mil width

Semiconductor Group

5.96

12 3 4 5 6 7...25

中文翻译

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