Datasheet > Q67100-Q2148

Q67100-Q2148

更新时间： 2024-02-03 00:15:27

品牌	Logo	应用领域
英飞凌 - INFINEON		动态存储器
页数	文件大小	规格书
24页	1309K
描述
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh

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中文翻译

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数据手册

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Q67100-Q2148 数据手册

3.3V 256 K x 16-Bit EDO-DRAM

HYB 314175BJ-50/-55/-60

HYB 314175BJL-50/-55/-60

3.3V 256 K x 16-Bit EDO-DRAM

(Low power version with Self Refresh)

Preliminary Information

• 262 144 words by 16-bit organization

• 0 to 70 °C operating temperature

• Fast access and cycle time

• Low Power dissipation

max. 450 mW active (-50 version)

max. 432 mW active (-55 version)

max. 378 mW active (-60 version)

• Standby power dissipation

7.2 mW standby (TTL)

• RAS access time:

50 ns (-50 version)

55 ns (-55 version)

60 ns (-60 version)

3.6 mW max. standby (CMOS)

0.72 mW max. standby (CMOS) for

Low Power Version

• CAS access time:

13ns (-50 & -55 version)

15 ns (-60 version)

• Output unlatched at cycle end allows two-

dimensional chip selection

• Read, write, read-modify write, CAS-

before-RAS refresh, RAS-only refresh,

hidden-refresh and hyper page (EDO)

mode capability

• Cycle time:

89 ns (-50 version)

94 ns (-55 version)

104 ns (-60 version)

• Hype page mode (EDO) cycle time

20 ns (-50 & -55 version)

25 ns (-60 version)

• 2 CAS / 1 WE control

• Self Refresh (L-Version)

• All inputs and outputs TTL-compatible

• 512 refresh cycles / 16 ms

• 512 refresh cycles / 128 ms

Low Power Version only

• High data rate

50 MHz (-50 & -55 version)

40 MHz (-60 version)

• Plastic Packages:

• Single + 3.3 V (±0.3 V) supply with a built-

P-SOJ-40-1 400mil width

in VBB generator

The HYB 314175BJ/BJL is the new generation dynamic RAM organized as 262 144 words by

16-bit. The HYB 314175BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit

techniques to provide wide operation margins, both internally and for the system user. Multiplexed

address inputs permit the HYB 314175BJ/BJL to be packed in a standard plastic 400mil wide

P-SOJ-40-1 package. This package size provides high system bit densities and is compatible with

commonly used automatic testing and insertion equipment. System oriented features include Self

Refresh (L-Version), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance

logic device families.

Semiconductor Group

7.96

12 3 4 5 6 7...24

中文翻译

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与Q67100-Q2148相关器件

型号	品牌	获取价格	描述	数据表
Q67100-Q2149	INFINEON	获取价格	3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refr
Q67100-Q2156	INFINEON	获取价格	4M x 32-Bit EDO-DRAM Module
Q67100-Q2157	INFINEON	获取价格	4M x 32-Bit EDO-DRAM Module
Q67100-Q2176	INFINEON	获取价格	3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2177	INFINEON	获取价格	3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2178	INFINEON	获取价格	3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2179	INFINEON	获取价格	3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2180	INFINEON	获取价格	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2181	INFINEON	获取价格	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2182	INFINEON	获取价格	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module

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