Datasheet > Q67100-Q2367

Q67100-Q2367

更新时间： 2024-02-15 19:51:55

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Q67100-Q2367 数据手册

4M x 36-Bit EDO - DRAM Module

HYM364025S/GS-50/-60

• SIMM modules with 4 194 304 words by 36-Bit organization

for PC main memory applications

• Fast access and cycle time

50 ns access time

84 ns cycle time (-50 version)

60 ns access time

104 ns cycle time (-60 version)

• Hyper Page Mode (EDO) capability

20 ns cycle time (-50 version)

25 ns cycle time (-60 version)

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 6820 mW active (-50 version)

max. 6160 mW active (-60 version)

CMOS – 66 mW standby

TTL –132 mW standby

• CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module (L-SIM-72-12) with 22.9 mm (900 mil) height

• Utilizes eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write parity applications

• Tin-Lead contact pads (S-version)

• Gold contact pads (GS - version)

Semiconductor Group

4.97

12 3 4 5 6 7...10

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