Datasheet > Q67100-Q2156

Q67100-Q2156

更新时间： 2024-02-25 02:53:46

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Q67100-Q2156 数据手册

4M x 32-Bit EDO-DRAM Module

HYM 324025S/GS-50/-60

• 4 194 304 words by 32-bit organized SIMM modules

for PC main memory applications

• Fast access and cycle time

50 ns access time

84 ns cycle time (-50 version)

60 ns access time

104 ns cycle time (-60 version)

• Hyper page mode (EDO) capability

20 ns cycle time (-50 version)

25 ns cycle time (-60 version)

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 5280 mW active (HYM 324025S/GS-50)

max. 4840 mW active (HYM 324025S/GS-60)

CMOS – 44 mW standby

TTL

–88 mW standby

• CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

• 8 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module with 22.86 mm (900 mil) height

• Utilizes eight 4Mx4-DRAMs in 300mil wide SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write non-parity applications

• Tin-Lead contact pads (S - version)

• Gold contact pads (GS - version)

Semiconductor Group

9.96

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
Q67100-Q2157	INFINEON	获取价格	4M x 32-Bit EDO-DRAM Module
Q67100-Q2176	INFINEON	获取价格	3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2177	INFINEON	获取价格	3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2178	INFINEON	获取价格	3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2179	INFINEON	获取价格	3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module
Q67100-Q2180	INFINEON	获取价格	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2181	INFINEON	获取价格	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2182	INFINEON	获取价格	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2183	INFINEON	获取价格	3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
Q67100-Q2184	INFINEON	获取价格	3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module