Datasheet > Q67100-Q3017

Q67100-Q3017

更新时间： 2024-09-26 22:25:59

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Q67100-Q3017 数据手册

4M × 36-Bit EDO-DRAM Module

HYM 364035S/GS-60

Advanced Information

• 4 194 304 words by 36-Bit organization

• Fast access and cycle time

60 ns RAS access time

15 ns CAS access time

104 ns cycle time

• Hyper page mode (EDO) capability

25 ns cycle time

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 7260 mW active

CMOS – 66 mW standby

TTL – 132 mW standby

• CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

• 12 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module (L-SIM-72) with 22.9 mm (900 mil) height

• Utilizes 12 4M x 3 DRAM’s in 300 mil SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write parity applications

• Tin-Lead contact pads (HYM 364035S-60)

• Gold contact pads (HYM 364035GS-60)

Semiconductor Group

4.96

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
Q67100-Q3018	INFINEON	获取价格	8M x 36-Bit EDO-DRAM Module
Q67100-Q3019	INFINEON	获取价格	8M x 36-Bit EDO-DRAM Module
Q67100-Q433	INFINEON	获取价格	256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q518	INFINEON	获取价格	1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit
Q67100-Q519	INFINEON	获取价格	1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit
Q67100-Q526	INFINEON	获取价格	1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit
Q67100-Q527	INFINEON	获取价格	1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit
Q67100-Q530	INFINEON	获取价格	256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q536	INFINEON	获取价格	256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
Q67100-Q537	INFINEON	获取价格	256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM