Datasheet > Q67100-Q2096

Q67100-Q2096

更新时间： 2024-01-25 21:41:05

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Q67100-Q2096 数据手册

4M x 32-Bit EDO-DRAM Module

HYM 324025S/GS-50/-60

• 4 194 304 words by 32-bit organized SIMM modules

for PC main memory applications

• Fast access and cycle time

50 ns access time

84 ns cycle time (-50 version)

60 ns access time

104 ns cycle time (-60 version)

• Hyper page mode (EDO) capability

20 ns cycle time (-50 version)

25 ns cycle time (-60 version)

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 5280 mW active (HYM 324025S/GS-50)

max. 4840 mW active (HYM 324025S/GS-60)

CMOS – 44 mW standby

TTL

–88 mW standby

• CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

• 8 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module with 22.86 mm (900 mil) height

• Utilizes eight 4Mx4-DRAMs in 300mil wide SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write non-parity applications

• Tin-Lead contact pads (S - version)

• Gold contact pads (GS - version)

Semiconductor Group

9.96

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
Q67100-Q2098	INFINEON	获取价格	8M x 32-Bit EDO-DRAM Module
Q67100-Q2099	INFINEON	获取价格	8M x 32-Bit EDO-DRAM Module
Q67100-Q2100	INFINEON	获取价格	256k x 16-Bit EDO-DRAM
Q67100-Q2116	INFINEON	获取价格	1M x 4-Bit Dynamic RAM
Q67100-Q2118	INFINEON	获取价格	1M x 4-Bit Dynamic RAM
Q67100-Q2120	INFINEON	获取价格	1M x 4-Bit Dynamic RAM
Q67100-Q2122	INFINEON	获取价格	1M x 4-Bit Dynamic RAM
Q67100-Q2124	INFINEON	获取价格	1M x 4-Bit Dynamic RAM
Q67100-Q2126	INFINEON	获取价格	1M x 4-Bit Dynamic RAM
Q67100-Q2148	INFINEON	获取价格	3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refr