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Q67100-Q2017 PDF预览

Q67100-Q2017

更新时间: 2024-11-06 23:06:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 144K
描述
2M x 32-Bit Dynamic RAM Module

Q67100-Q2017 数据手册

 浏览型号Q67100-Q2017的Datasheet PDF文件第2页浏览型号Q67100-Q2017的Datasheet PDF文件第3页浏览型号Q67100-Q2017的Datasheet PDF文件第4页浏览型号Q67100-Q2017的Datasheet PDF文件第5页浏览型号Q67100-Q2017的Datasheet PDF文件第6页浏览型号Q67100-Q2017的Datasheet PDF文件第7页 
2M x 32-Bit Dynamic RAM Module  
HYM 322160S/GS-60/-70  
Advanced Information  
2 097 152 words by 32-Bit organization  
CAS-before-RAS refresh  
(alternative 4 194 304 words by 16-Bit)  
RAS-only-refresh  
Hidden-refresh  
Fast access and cycle time  
60 ns access time  
8 decoupling capacitors mounted on  
110 ns cycle time (-60 version)  
70 ns access time  
130 ns cycle time (-70 version)  
substrate  
All inputs, outputs and clocks fully TTL  
compatible  
Fast page mode capability with  
40 ns cycle time (-60 version)  
45 ns cycle time (-70 version)  
72 pin double-sided Single in-Line Memory  
Module with 25.4 mm (1000 mil) height  
Utilizes sixteen 1M × 4 DRAMs in 300 mil  
Single + 5 V (± 10 %) supply  
SOJ packages  
Low power dissipation  
1024 refresh cycles / 16 ms  
max. 4840 mW active (-60 version)  
max. 4400 mW active (-70 version)  
CMOS – 88 mW standby  
Tin-Lead contact pads (S - version)  
Gold contact pads (GS - version)  
TTL – 176 mW standby  
Ordering Information  
Type  
Ordering Code  
Package  
Description  
HYM 322160S-60  
Q67100-Q2014  
L-SIM-72-11  
L-SIM-72-11  
L-SIM-72-11  
L-SIM-72-11  
DRAM Module  
(access time 60 ns)  
HYM 322160S-70  
HYM 322160GS-60  
HYM 322160GS-70  
Q67100-Q2015  
Q67100-Q2016  
Q67100-Q2017  
DRAM Module  
(access time 70 ns)  
DRAM Module  
(access time 60 ns)  
DRAM Module  
(access time 70 ns)  
Semiconductor Group  
551  
09.94  

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