Datasheet > Q67050-A4110

Q67050-A4110

更新时间： 2024-01-23 02:07:32

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关
页数	文件大小	规格书
4页	73K
描述
Fast switching diode chip in EMCON-Technology

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Q67050-A4110 数据手册

Preliminary

SIDC08D120H6

Fast switching diode chip in EMCON-Technology

FEATURES:

This chip is used for:

EUPEC power modules and

discrete devices

1200V EMCON technology 120 µm chip

soft, fast switching

low reverse recovery charge

small temperature coefficient

Applications:

SMPS, resonant applications,

drives

Chip Type

V_R

I_F

Die Size

2.2 x 3.7 mm²

Package

Ordering Code

SIDC08D120H6

1200V 10A

sawn on foil Q67050-A4110

MECHANICAL PARAMETER:

Raster size

2.2 x 3.7

mm²

Area total / active

Anode pad size

Thickness

8.14 / 4.73

1.48 x 2.98

120

150

180

µm

deg

Wafer size

Flat position

Max. possible chips per wafer

Passivation frontside

Anode metallisation

1850 pcs

Photoimide

3200 nm AlSiCu

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Cathode metallisation

Die bond

electrically conductive glue or solder

Wire bond

Al, £500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI PS DD HV3, L 4352S, Edition 1, 8.01.2002

12 3 4

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