Datasheet > Q62702-C1659

Q62702-C1659

更新时间： 2024-09-14 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管
页数	文件大小	规格书
4页	36K
描述
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage)

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Q62702-C1659 数据手册

BF 1012

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled

input stages up to 1GHz

• Operating voltage 12V

• Integrated stabilized bias network

VPS05178

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code Pin Configuration

Package

BF 1012

MYs

Q62702-F1487 1 = S

2 = D

3 = G2 4 = G1 SOT-143

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-source voltage

Continuos drain current

Gate 1/gate 2 peak source current

±I

G1/2SM

Gate 1 (external biasing)

G1SE

200

°C

Total power dissipation, T ≤ 76 °C

tot

Storage temperature

Channel temperature

-55 ...+150

150

stg

Thermal Resistance

Channel - soldering point

K/W

≤370

thchs

Note:

It is not recommended to apply external DC-voltage on Gate 1 in active mode.

Semiconductor Group

Sep-09-1998

1998-11-01

Semiconductor Group

12 3 4

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