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Q62702-C1714 PDF预览

Q62702-C1714

更新时间: 2024-11-05 23:09:39
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英飞凌 - INFINEON 晶体晶体管
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4页 148K
描述
PNP Silicon AF Transistors (For general AF applications High collector current)

Q62702-C1714 数据手册

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PNP Silicon AF Transistors  
BCX 69  
For general AF applications  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
Complementary type: BCX 68 (NPN)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BCX 69  
Q62702-C1714  
Q62702-C1867  
Q62702-C1868  
Q62702-C1869  
B
C
E
SOT-89  
BCX 69-10  
BCX 69-16  
BCX 69-25  
CF  
CG  
CH  
Maximum Ratings  
Parameter  
Symbol  
Values  
20  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
EB0  
V
V
V
25  
5
I
I
I
I
C
1
A
Peak collector current  
Base current  
CM  
2
B
100  
200  
1
mA  
Peak base current  
Total power dissipation, T  
Junction temperature  
BM  
S
= 130 ˚C  
Ptot  
W
T
j
150  
˚C  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient 2)  
R
th JA  
th JS  
75  
20  
K/W  
R
Junction - soldering point  
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1

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