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Q62702-C1504 PDF预览

Q62702-C1504

更新时间: 2024-09-13 22:44:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
6页 232K
描述
PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

Q62702-C1504 数据手册

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BC 847PN  
NPN/PNP Silicon AF Transistor Array  
For AF input stages and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Two (galvanic) internal isolated NPN/PNP  
Transistors in one package  
Tape loading orientation  
PIN Configuration  
NPN-Transistor 1 = E 2 = B 6 = C  
Type  
Marking Ordering Code  
1Ps Q62702-C2374  
Package  
SOT-363 PNP-Transistor 4 = E 5 = B 3 = C  
BC 847PN  
Maximum Ratings  
Parameter  
Symbol  
Value  
45  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
V
V
CEO  
V
50  
CBO  
V
50  
CES  
V
5
EBO  
I
100  
mA  
C
I
200  
CM  
Total power dissipation, T = 115 °C  
P
250  
mW  
°C  
S
tot  
Junction temperature  
Storage temperature  
T
150  
j
T
-65...+150  
stg  
Thermal Resistance  
Junction ambient 1)  
R
R
275  
140  
K/W  
thJA  
Junction - soldering point  
thJS  
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu  
Semiconductor Group  
1
May-12-1998  

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