Datasheet > Q62702-C153

Q62702-C153

更新时间： 2024-11-04 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	34K
描述
PNP SILICON TRANSISTORS

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中文翻译

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数据手册

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Q62702-C153 数据手册

Silizium-Fotodiode

Silicon Photodiode

BPW 33

5.4

4.9

4.5

4.3

Cathode marking

Chip position

4.0

3.7

0.6

0.4

0.6

0.4

0.35

0.2

0.5

0.3

0.8

0.6

0 ... 5˚

5.08 mm

spacing

Photosensitive area

2.65 mm x 2.65 mm

Approx. weight 0.1 g

GEO06643

Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Wesentliche Merkmale

Features

● Speziell geeignet für Anwendungen im

Bereich von 350 nm bis 1100 nm

● Sperrstromarm (typ. 20 pA)

● DIL-Plastikbauform mit hoher

Packungsdichte

● Especially suitable for applications from

350 nm to 1100 nm

● Low reverse current (typ. 20 pA)

● DIL plastic package with high packing

density

Anwendungen

Applications

● Belichtungsmesser

● Farbanalyse

● Exposure meters

● Color analysis

Typ

Type

Bestellnummer

Ordering Code

BPW 33

Q62702-P76

Semiconductor Group

1997-11-19

12 3 4

中文翻译

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