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Q62702-A1070 PDF预览

Q62702-A1070

更新时间: 2024-01-16 21:03:24
品牌 Logo 应用领域
英飞凌 - INFINEON 肖特基二极管开关电路保护
页数 文件大小 规格书
4页 176K
描述
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

Q62702-A1070 数据手册

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BAS 70W  
Silicon Schottky Diode  
General-purpose diodes for  
high-speed switching  
Circuit protection  
Voltage clamping  
High-level detection and mixing  
Type  
Ordering Code  
(tape and reel)  
Pin Configuration  
Marking  
Package1)  
1
2
3
BAS 70-04W Q62702-A1068  
BAS 70-05W Q62702-A1069  
BAS 70-06W Q62702-A1070  
A1  
A1  
C1  
C2  
A2  
C2  
C1/A2 74s  
C1/C2 75s  
A1/A2 76s  
SOT-323  
Maximum Ratings  
Parameter  
Symbol  
VR  
Values  
Unit  
V
Reverse voltage  
70  
Forward current  
IF  
70  
mA  
mA  
mW  
°C  
Surge forward current, t 10 ms  
Total power dissipation TS 91 °C  
Operating temperature range  
Storage temperature range  
Thermal Resistance  
IFSM  
Ptot  
100  
250  
Top  
– 55 … + 150  
– 55 … + 150  
°C  
Tstg  
Junction-ambient1)  
Rth JA  
Rth JS  
455  
235  
K/W  
K/W  
Junction-soldering point  
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu.  
Semiconductor Group  
1
10.94  

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Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High sh