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Q62702-A1105 PDF预览

Q62702-A1105

更新时间: 2024-01-27 03:22:51
品牌 Logo 应用领域
英飞凌 - INFINEON 肖特基二极管
页数 文件大小 规格书
4页 91K
描述
Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad)

Q62702-A1105 数据手册

 浏览型号Q62702-A1105的Datasheet PDF文件第2页浏览型号Q62702-A1105的Datasheet PDF文件第3页浏览型号Q62702-A1105的Datasheet PDF文件第4页 
BAT 63-099R  
Silicon Schottky Diodes  
• Zero bias diode array for mixer and detectors up to  
GHz frequencies  
• Crossover ring quad  
Type  
Marking Ordering Code  
Pin Configuration  
1 = A 2 = C  
Package  
BAT 63-099RSN  
Q62702-A1105  
SOT-143  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
V
Diode reverse voltage  
Forward current  
V
40  
40  
R
I
mA  
mW  
F
Total power dissipation, BAT17W T 97°C  
P
A
tot  
tot  
j
Total power dissipation, BAT17-04...06W T  
Junction temperature  
92°C P  
S
T
T
T
150  
°C  
Operating temperature range  
Storage temperature  
op  
stg  
- 55 ... + 150  
Thermal Resistance  
Junction - ambient, BAT17W  
Junction - ambient, BAT17-04W...06W  
Junction - soldering poin, BAT17W  
R
R
R
R
K/W  
thJA  
thJA  
thJS  
thJS  
Junction - soldering point, BAT17-04W...06W  
Semiconductor Group  
1
Feb-01-1996  

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