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Q62702-A1097 PDF预览

Q62702-A1097

更新时间: 2024-02-07 06:54:37
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管开关
页数 文件大小 规格书
4页 81K
描述
Silicon Switching Diode Array (For high speed switching applications Common cathode)

Q62702-A1097 数据手册

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BAV 70S  
Silicon Switching Diode Array  
• For high speed switching applications  
• Common cathode  
• Internal (galvanic) isolated Diodes Arrays  
in one package  
Type  
Marking Ordering Code  
A4s Q62702-A1097  
Pin Configuration  
1/4=A1 2/5=A2  
Package  
BAV 70S  
3/6=C1/2 SOT-363  
Maximum Ratings per Diode  
Parameter  
Symbol  
Values  
70  
Unit  
Diode reverse voltage  
Peak reverse voltage  
Forward current  
V
V
V
R
70  
RM  
I
I
200  
4.5  
mA  
A
F
µ
Surge forward current, t = 1 s  
FS  
Total Power dissipation  
P
tot  
mW  
T = 85 °C  
S
250  
Junction temperature  
Storage temperature  
T
T
150  
°C  
j
- 65 ... + 150  
stg  
Thermal Resistance  
1)  
Junction ambient  
R
R
530  
K/W  
thJA  
Junction - soldering point  
260  
thJS  
2
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm Cu  
Semiconductor Group  
1
Nov-28-1996  

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