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Q62702-A1211 PDF预览

Q62702-A1211

更新时间: 2024-09-25 22:44:11
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管开关射频
页数 文件大小 规格书
4页 27K
描述
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance)

Q62702-A1211 数据手册

 浏览型号Q62702-A1211的Datasheet PDF文件第2页浏览型号Q62702-A1211的Datasheet PDF文件第3页浏览型号Q62702-A1211的Datasheet PDF文件第4页 
BAR 63-02W  
Silicon PIN Diode  
PIN diode for high speed switching  
of RF signals  
2
Low forward resistance, small capacitance  
small inductance  
Very low capacitance  
1
VES05991  
For frequencies up to 3 GHz  
Type  
Marking Ordering Code  
Q62702-A1211  
Pin Configuration  
Package  
BAR 63-02W  
G
1 = C  
2 = A  
SCD-80  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Diode reverse voltage  
Forward current  
50  
V
R
100  
250  
150  
mA  
mW  
°C  
I
F
Total power dissipation, T = 115 °C  
P
tot  
S
Junction temperature  
T
j
Operating temperature range  
Storage temperature  
-55 ...+150  
-55 ...+150  
°C  
T
T
op  
stg  
Thermal Resistance  
1)  
Junction - ambient  
K/W  
R
R
220  
140  
thJA  
thJS  
Junction - soldering point  
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm  
Semiconductor Group  
1
Sep-07-1998  
1998-11-01  
Semiconductor Group  
1

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