Datasheet > Q62702-A1159

Q62702-A1159

更新时间： 2024-02-02 22:15:22

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管仪表
页数	文件大小	规格书
6页	73K
描述
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)

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Q62702-A1159 数据手册

BAT 64...W

Silicon Schottky Diodes

• For low-loss, fast-recovery, meter protection,

bias isolation and clamping applications

• Integrated diffused guard ring

• Low forward voltage

VSO05561

BAT 64W

BAT 64-04W

BAT 64-05W

BAT 64-06W

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BAT 64W

63s

Q62702-A1159

Q62702-A1160

Q62702-A1161

Q62702-A1162

1 = A

2 n.c.

3 = C

SOT-323

BAT 64-04W 64s

BAT 64-05W 65s

BAT 64-06W 66s

1 = A1

1 = C1

2 = C2

2 = A2

2 = C2

3 = C1/A2

3 = C1/2

3 = A1/2

Maximum Ratings

Parameter

Symbol

Value

Unit

Diode reverse voltage

Forward current

250

Average forward current (50/60Hz, sinus)

120

FAV

800

Surge forward current (t< 100µs)

FSM

250

°C

Total power dissipation

BAT 64W, T ≤120°C P

tot

250

Total power dissipat. BAT64-04/06W, T ≤111°C P

250

Total power dissipation BAR 64-05W, T ≤104°C P

Junction temperature

Storage temperature

150

-55...+150

stg

Semiconductor Group

Sep-07-1998

1998-11-01

12 3 4 5 6

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