生命周期: | Active | 包装说明: | R-PSSO-F3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.6 |
Is Samacsys: | N | 外壳连接: | CATHODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 最大输出电流: | 1 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 最大功率耗散: | 1 W |
最大重复峰值反向电压: | 400 V | 最大反向恢复时间: | 1 µs |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
Q62702-A1097 | INFINEON |
获取价格 |
Silicon Switching Diode Array (For high speed switching applications Common cathode) | |
Q62702-A1103 | INFINEON |
获取价格 |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance | |
Q62702-A1104 | INFINEON |
获取价格 |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type | |
Q62702-A1105 | INFINEON |
获取价格 |
Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequenci | |
Q62702-A113 | INFINEON |
获取价格 |
Silicon Switching Diodes (High-speed, high-voltage switch) | |
Q62702-A1145 | INFINEON |
获取价格 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High sh | |
Q62702-A1159 | INFINEON |
获取价格 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and | |
Q62702-A1160 | INFINEON |
获取价格 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and | |
Q62702-A1161 | INFINEON |
获取价格 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and | |
Q62702-A1162 | INFINEON |
获取价格 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and |